ANNEX TO PROPOSED GOODS REVIEW LIST (GRL)
Technical Parameters for Individual Items  

#1. Specific advanced telecommunication equipment  

a.     Any type of telecommunications equipment, specially designed to operate outside the temperature range from 219 K (-54°C) to 397 (124°C).

b.     Telecommunication transmission equipment and systems, and specially designed components and accessories therefor, having any of the following characteristics, functions or features:

b.l.       Employing digital techniques, including digital processing of analog signals, and designed to operate at a digital transfer rate at the highest multiplex level exceeding 155 Mbit/s;
b.2.       Modems using the bandwidth of one voice channel with a data signalling rate exceeding 128,000 bits per second;
b.3.      Being stored program controlled digital cross connect equipment with digital transfer rate exceeding 155 Mbit/s per port.
b.4.      Being equipment containing any of the following:

b.4.a.         Network access controllers and their related common medium having a digital transfer rate exceeding 155 Mbit/s; or b.4.b.         Communication channel controllers with a digital output having a data signalling- rate exceeding 64,000 bit/s per channel;

b.5. Employing a laser or LED;
b.6. Radio equipment operating at input output frequencies exceeding:

b.6.1.         31 GHz for satellite-earth station applications; or
b.6.2.         26.5 GHz for other applications;

b.7.       Being radio equipment employing any of the following:

b.7.a.         QAM techniques above level 64; or
b.7.b.        Other digital modulation techniques and having a spectral efficiency exceeding 4 bit/sec/Hz;

c.     Stored program controlled switching equipment and related signalling systems, having any of the following characteristics, functions or features, and specially designed components and accessories therefor:

( Note: Statistical multiplexers with digital input and digital output that provide switching are treated as stored program controlled switches.)

c.1.      Data (message) switching equipment or systems designed for packet-mode operation and assemblies and components therefor;
c.2.       Containing Integrated Services Digital Network (ISDN) functions and having any of the following:

c.2.a. Switch-terminal (e.g., subscriber line) interfaces with a digital transfer rate at the highest multiplex level exceeding 192,000 bit/s, including the associated signalling channel (e.g., 2B+D); or
c.2.b. The capability that a signalling message received by a switch on a given channel that is related to a communication on another channel may be passed through to another switch.

c.3.      Multi-level priority and pre-emption for circuit switching;
c.4.      Designed for automatic hand-off of cellular radio calls to other cellular switches or automatic connection to a centralized subscriber database common to more than one switch;
c.5.      Containing stored program controlled digital crossconnect equipment with digital transfer rate exceeding 155 Mbit/s per port.
c.6.      Common channel signalling operating in either non-associated, or quasi-associated mode of operation;
c.7.      Dynamic adaptive routing;
c.8.     Being packet switches, circuit switches and routers with ports or lines exceeding any of the following:

c.8.a. A data signalling rate of 64,000 bit/s per channel for a communications channel controller; or
c.8.b. A digital transfer rate of 155 Mbit/s for a network access controller and related common media;

c.9.      Optical switching;

d. Optical fibers and optical fiber cables of more than 5 m in length designed for single mode or multi-mode operation;

e. Centralized network control having all of the following characteristics;

e.1.      Receives data from the nodes; and
e.2.      Process these data in order to provide control of traffic not requiring operator decisions, and thereby performing dynamic adaptive routing;

f.      Phased array antennae, containing active elements and distributed components, and designed to permit electronic control of beam shaping and pointing, except for landing systems with instruments meeting International Civil Aviation Organization (ICAO) standards (microwave landing systems (MLS)).

g.     Mobile communications equipment, and assemblies and components therefor; or

h.     Radio relay communications equipment designed for use at frequencies exceeding 8 GHz and assemblies and components therefor;

i.      Spread spectrum radio equipment.

j.      Digitally controlled receivers capable of automatically scanning or searching a part of the spectrum with a frequency switching time not exceeding 200 ms.;

k.      LOW optical absorption materials for the production of optical fiber preforms.

1.     Software specially designed for the development or production of the components or equipment in a-k above;

m.    Technology for the development, design or production of the components or equipment in a-l above.  

#2. Information security equipment  

Information security equipment having any of the following characteristics:
a.      a symmetric encryption algorithm;
b.     an asymmetric encryption algorithm;
c.     a discrete—log encryption algorithm;
d.      analog encryption or scrambling;
e.     TCSEC B1, B2, B3, or A1 Multilevel Secure (MLS) computer systems.
f.          Software specially designed for the development or production of a-c above; g.     Technology for the development, design or production of a-f above.  

#3 High performance computers above 6500 MTOPS, electronic assemblies, and related equipment, and specially designed components therefor.

a.     Electronic computers and related equipment, and electronic assemblies arid specially designed components therefor, rated for operation at an ambient temperature above 343 K (70° C);

b.     Digital computers having a composite theoretical performance (CTP) equal to or greater than 6,500 million theoretical operations per second (Mtops);

c.     Assemblies that are specially designed or modified to enhance performance by aggregation of computing elements (CEs), as follows:

c.1.       Designed to be capable of aggregation in configurations of 16 or more computing elements (CEs) or
c.2.       Having a sum of maximum data rates on all channels available for connection to associated processors exceeding 40 million Bytes/s.

d.     Disk drives and solid state storage equipment;

d.l.        Magnetic, erasable optical or magneto-optical disk drives with a maximum bit transfer rate exceeding 25 million bit/s;
d.2.       Solid state storage equipment, other than main storage (also known as solid state disks or RAM disks), with a maximum bit transfer rate exceeding 36 million bit/s;

e.      Input/output control units for use with equipment controlled by paragraph d. above;

f.      Equipment for signal processing or image enhancement having a composite theoretical performance (CTP) exceeding 8.5 million theoretical operations per second (Mtops);

g.     Graphics accelerators or graphics coprocessors that exceeds a 3-D vector rate of 400,000 or, if supported by 2-D vectors only, a 2-D vector rate of 600,000;

h.     Technology for the development or production of graphics accelerators or equipment designed for multi-data stream processing.

i.     Color displays or monitors having more than 120 resolvable elements per cm in the direction of the maximum pixel density;

j.       Equipment containing terminal interface equipment exceeding the limits in Item VIII.

Note:  For the purposes of paragraph i. above, terminal interface equipment includes local area network interfaces, modems and other communications interfaces. Local
area network interfaces are evaluated as network access controllers.  

#5 Operating system software specially designed for real time processing equipment that guarantees a global interrupt latency time of less than 20 µs.  

#7. Equipment for the development and production of magnetic and optical storage equipment.  

a.     Equipment specially designed for the application of magnetic coating to controlled non—flexible (rigid) magnetic or magneto-optical media;
b.     Stored program controlled equipment specially designed for monitoring, grading, exercising or testing controlled rigid magnetic media;
c.     Equipment specially designed for the production or alignment of heads or head/disk assemblies for controlled rigid magnetic and magneto-optical storage, and electro­mechanical or optical components therefor.
d.     Materials specially formulated for and required tar the fabrication of head-disk assemblies for magnetic and magneto—optical hard disk drives.
e.     Technology for the production of magnetic hard drives exceeding 11 Mbits/s MBTR.  

#8.   Space qualified digital instrumentation data recorders. Electronic test equipment, including high transfer rate digital instrumentation magnetic data tape recorders.  

a.     Electronic test equipment;
b.     Digital instrumentation magnetic tape data recorders having any of the following any of the following characteristics;

b.l.        A maximum digital interface transfer rate exceeding 60 Mbit/s and employing helical scan techniques;
b.2.       A maximum digital interface transfer rate exceeding 120 Mbit/s and employing fixed head techniques; or
b.3.       Space qualified;

c. Equipment, with a maximum digital interface transfer rate exceeding 60 Mbit/s, designed to convert digital video magnetic tape recorders for use as digital instrumentation data recorders;
d.     Radiation and radioisotope detection and simulation equipment, analyzers, software, and Nuclear Instrumentation Module (NIM) componentry and mainframes;
e.     Software specially designed for the development or production of the components or equipment in a. through d. above;
f. Technology for the development, design or production of the components or equipment in a-e above.  

#9. Optical Technology for the manufacture of satellite sensors.

a.     Optical fabrication technologies for serially producing optical components at a rate of 10 m2 of surface area per year on any single spindle and with:

a.1       An area exceeding 1m²; and
a.2       A surface figure exceeding lambda / 10 rms at the designed wavelength;

b.     Technology for optical filters with a bandwidth equal to or less than 10 nm, a field of view (FOV) exceeding 40 degrees and a resolution exceeding 0.75 line pairs per steradian.  

#10. Image intensifier tubes for night vision equipment. Microchannel plantes (components) for night vision equipment. Optical filters for multispectral scanners. Optical fiber preforms.  

a.     Image intensifier tubes having all the following:

a.l.   A peak response in wavelength range exceeding 400 nm, but not exceeding 1,050 nm;
a.2.  A microchannel plate for electron image amplification with a hole pitch (center-to-center spacing) of less than 25 micrometers; and
a.3.  Having any of the following;

a.3.a. An S-20, S-25 or multialkali photocathode; or
a.3.b. A GaAs or GaInAs photocathode;

b.     Specially designed microchannel plates having both of the following characteristics:

b.1.       15,000 or more hollow tubes per plate; and
b.2.       Hole pitch (center-to-center spacing) of less than 25 micrometers;

c.     Software specially designed for the development or production of the components or equipment in a. and b. above
d.     Technology for the development, design or production of the components or equipment in a. and b. above.

e.     Optical filters, as follows:

e.1.      For wavelengths longer than 250 nm, comprised of multi—layer optical coatings and having either of the following:

e.1.a.        Bandwidths equal to or less than 1 nm Full Width Half Intensity (FWHI) and peak transmission of 90% or more; or
e.1.b.        Bandwidths equal to or less than 0.1 nm FWHI and peak transmission of 50% or more;

e.2.      For wavelengths longer than 250 nm, and having all of the following;

e.2.a.        Tunable over a spectral range of 500 nm or more;
e.2.b.        Instantaneous optical bandpass of 1.25 nm or less;
e.2.c.        Wavelength resettable within 0.1 ms to an accuracy of 1 nm or better within the tunable spectral range; and
e.2.d.        A single peak transmission of 91% or more;

e.3. Optical opacity switches (filters) with a field of view of 30° or wider and a response time equal to or less than 1 ns;

f.      fluoride fiber cable, or optical fibers therefor, having an attenuation of less than 4 dB/km in the wavelength range exceeding 1,000 nm but not exceeding 3,000 nm.  

#11. Field programmable logic devices. Travelling wave tubes. Flexible wave guides. Surface acoustic wave devices. Hydrogen-isotope thyratrons.  

a.     Field programmable logic devices having either of the following:

a.1.       An equivalent gate count of more than 5000 (2 input gates); or
a2.       A toggle frequency exceeding 100 MHz;

b.     Travelling wave tubes, pulsed or continuous wave, as follows:

b.1.       Coupled cavity tubes, or derivatives thereof;
b.2.       Helix tubes, or derivatives thereof, with any of the following:

b.2.a.1. An instantaneous bandwidth of half an octave or more; and
b.2.a.2. The product of the rated average output power (expressed in kW) and the maximum operating frequency (expressed in GHz) of more than 0.2;
b.2.b.1. An instantaneous bandwidth of less than half an octave; and
b.2.b.2. The product of the rated average output power (expressed in kW) and the maximum operating frequency (expressed in GHz) of more than 0.4;

c.     Flexible waveguides designed for use at frequencies exceeding 40 GHz;

d.     Surface acoustic wave and surface skimming (shallow bulk) acoustic wave devices (i.e., signal processing devices employing elastic waves in materials), having either of the following;

d.l. A carrier frequency exceeding 1 GHz; or
d.2.       A carrier frequency of 1 GHz or less; and

d.2.a.        A frequency side-lobe rejection exceeding 55 Db;
d.2.b.        A product of the maximum delay time and bandwidth (time in microseconds and bandwidth in MHz) of more than 100; or
d.2.c.        A dispersive delay of more than 10 microseconds.

e.     Hydrogen/hydrogen-isotope thyratrons of ceramic-metal construction and rate for a peak current of 500 A or more;

f.      Software specially designed for the development or production of the components or equipment in a. through e. above;

h.     Technology for the development, design or production of the components or equipment in a-e above.  

#12. Semiconductor lasers. Solid state lasers. Equipment for the manufacture of free electron lasers.  

a.     Semiconductor lasers, as follows:

a.1.      Individual, single-transverse mote semiconductor lasers having:  

a.1.a.         An average output power exceeding 100 MW;

or

a.1.b.        A wavelength exceeding 1,050 nm;

a.2.  Individual, multiple-transverse mode semiconductor lasers, or arrays of individual semiconductor lasers, having a wavelength exceeding 1,050 nm;

b. Solid state, non-tunable lasers, as follows:

b.1.  Ruby lasers having an output energy exceeding 20 C per pulse;
b.2.  Neodymium-doped (other than glass) lasers, as follows,, with an output wavelength exceeding 1,000 nm but not exceeding 1,100 nm:

b.2.a.  Pulse-excited, Q-switched lasers, with a pulse duration equal to or more than 1 ns, and a multiple-transverse mode output with any of the following:

b.2.a.1. A peak power exceeding 200 Mw; or
b.2.a.2. An average output power exceeding 50 W;

b.2.b.  Pulse-excited, non-Q-switched lasers, having a multiple-transverse mode output with an average power exceeding 500 W; or
b.2.c.  Continuously excited lasers having a multiple-transverse mode output with an average or CW output power exceeding 500 W.

c.  Software specially designed for the development or production of the components or equipment in a. and b. above;

d.  Technology for the development, design or production of the components or equipment in a. and b. above.

#13. Infrared detector optical sensing fibers and materials.  

a.  Optical sensing fibers which are modified structurally to have a beat length of less than 500 mm (high birefringence); or,
b.     optical sensor materials having a zinc content of equal to or more than 6% by mole fraction. Technical Note: Mole Fraction is defined as the ratio of moles of ZnTe to the sum of the moles of CdTe and ZnTe present in the crystal.  

#15. Training, cargo, utility, and civil aircraft; demilitarized aircraft; aircraft engines; aircraft spare parts; and aircraft components.

a.  Civil aircraft and demilitarized aircraft (not specifically equipped or modified for military operation) Note: Specify make and model of aircraft and type of avionic equipment on aircraft.
b.  Aero gas turbine engines, and specially designed parts therefor.
c.  Aircraft parts and components;
d.  Software specially designed for the development or production of the components or equipment in a-c above;
e.  Technology for the development, design or production of the components or equipment in a-d above.  

#16. Airborne radar equipment, as follows, and specially designed components therefor.  

a.  Operating at frequencies £40 GHz or ³ 230 GHz and having an average output power exceeding 100 mW;
b.  Having a tunable bandwidth not exceeding ± 6.25% of the center operating frequency; Technical Note: The center operating frequency equals one half of the sum of the highest plus the lowest specified operating frequencies.
c.  Capable of operating on one or simultaneously on two carrier frequencies;
d.  Not capable of operating in synthetic aperture (SAR), inverse synthetic aperture (ISAR) radar mode, or side— looking airborne (SLAR) radar mode;
e.  Not incorporating electronically steerable phased array antennae;
f.  Not capable of heightfinding non--cooperative targets;
g.  Specially designed for airborne (balloon or airframe mounted) operation and not having Doppler signal processing for the detection of moving targets;
h.  Not employing processing of radar signals using either of the following:

h.1. Radar spread spectrum techniques; or
h.2. Radar frequency agility techniques;

i. Being laser radar or Light Detection and Ranging (LIDAR) equipment, having any of the following:

i.1.  Not space-qualified; or
i.2.  Not employing coherent heterodyne or homodyne detection techniques and having an angular resolution of -less (better) than 20 microradians;

j. Having signal processing sub-systems using pulse compression, with any of the following:

j.1.  A pulse compression ratio £ 150;
or A pulse width of ³ than 200 ns; or

k. Having data processing sub-systems without any of the following:

k.1.      Automatic target tracking providing, at any antenna rotation the predicted target position beyond the time of the next antenna beam passage;
k.2.      Calculation of target velocity from primary radar having non—periodic (variable) scanning rates;
k.3.      Processing for automatic pattern recognition (feature extraction) and comparison with target characteristic data bases (waveforms or imagery) to identify or classify targets; or
k.4.      Superposition and correlation, or fusion, of target data from two or more geographically dispersed and interconnected radar sensors to enhance and discriminate targets;

l. software specially designed for the development or production of the components or equipment in a. through k. above;
m. Technology for the development, design or production of the components or equipment in a-k above.  

#21. High resolution underwater electro-optical systems  
a. Television systems (comprising camera, lights, monitoring and signal transmission equipment) having a limiting resolution when measured in air of more than 500 lines and specially designed or modified for remote operation with a submersible vehicle; or b. Underwater television cameras having a limiting resolution when measured in air of more than 700 lines.  

#23. Marine or terrestrial acoustic equipment  

A. Marine acoustic systems, equipment and specially designed components therefor, as follows:

a.l. Active (transmitting or transmitting-and ­receiving) systems, equipment and specially designed components therefor, as follows:

a.1.a. Wide-swath bathymetric survey systems designed for sea bed topographic mapping, having all of the following;

a.1.a.1. Being designed to take measurements at an angle less than 20° from the vertical;
a.1.a.2. Being designed to measure depths less than 600 m below the water surface; and
a.1.a.3. Being designed to provide any of the following:

a.1.a.3.a. Incorporation of multiple beams any of which is greater than 1.9°; or
a.1.a.3.b. Data accuracies of worse than 0.3% of water depth across the swath averaged over the individual measurements within the swath;

a.1.b. Object detection or location systems having any of the following:

a.1.b.1. A transmitting frequency above 10 Khz;
a.1.b.2. Sound pressure level less than 224 Db (reference 1 Pa at 1 m) for equipment with an operating frequency in the band from 10 Khz to 24 Khz inclusive;
a.1.b.3. Sound pressure level less than 235 Db (reference 1 Pa at 3. m) for equipment with an operating frequency in the band between 24 Khz and 30 Khz;
a.1.b.4. Forming beams of > than 1deg on any axis and having an operating frequency of less than 100 Khz;
a.1.b.5. Designed to operate with an unambiguous display range less than 5,120 m; or
a.1.b.6. Designed to withstand pressure during normal operation at depths <1,000 m and having transducers with any of the following:

a.1.b.6.a. Dynamic compensation for pressure; or
a.1.b.6.b. Incorporating other than lead zirconate titanate as the transduction element;

a.1.c. Acoustic projectors, including transducers, incorporating piezoelectric, magnetostrictive, electrostrictive, electrodynamic or hydraulic elements operating individually or in a designed combination, having any of the following:

a.1.c.1. An instantaneous radiated acoustic power density < 0.01 mW/mm²/Hz for devices operating at frequencies below 10 Khz;
a.1.c.2. A continuously radiated acoustic power density < 0.001 Mw/mmn²/Hz for devices operating at frequencies below 10 Khz; or
a.1.c.3. Side-lobe suppression < 22 Db;

a.1.d. Acoustic systems, equipment and specially designed components for determining the position of surface vessels or underwater vehicles designed to operate at a range <1,000 m with a positioning accuracy of , >10 m rms (root mean square) when measured at a range of 1,000 in; or

a.2. Passive (receiving, whether or not related in normal application to separate active equipment) systems, equipment and specially designed components therefor, as follows:            

a.2.a. Hydrophones having any of the following characteristics;

a.2.a.1. Incorporating continuous flexible sensors or assemblies of discrete sensor elements with either a diameter or length > 20 mm and with a separation between elements of > 20 mm;
a.2.a.2. Having any of the following sensing elements:

a.2.a.2.a. Optical fibers;
a.2.a.2.b. Piezoelectric polymers; or
a.2.a.2.c. Flexible piezoelectric ceramic materials;

a.2.a.3. A hydrophone sensitivity worse than -180 Db at any depth with no acceleration compensation;
a.2.a.4. When designed to operate at depths < 35 m with acceleration compensation; or
a.2.a.5. Designed for operation at depths <1,000 m;

a.2.b. Towed acoustic hydrophone arrays having any of the following;

a.2.b.1. Hydrophone group spacing of >12.5 m;
a.2.b.2. Designed or able to be modified to operate at depths <35m;
a.2.b.3. Heading sensors having all of the following:

a.2.b.3.a. An accuracy of better than ±0.5°; and
a.2.b.3.b. Designed to operate at depths exceeding 35 m or having an adjustable or removable depth sensing device in order to operate at depths exceeding 35 m;

a.2.b.4. Longitudinally reinforced array hoses;
a.2.b.5. An assembled array of 40 mm in diameter;
a.2.b.6. Multiplexed hydrophone group signals designed to operate at depths exceeding 35 m or having an adjustable or removable depth sensing device in order to operate at depths < 35 m; or
a.2.b.7. Hydrophones having any of the following characteristics;            

a.2.b.7.a. Incorporating continuous flexible sensors or assemblies of discrete sensor elements with either a diameter or length less than 20 mm and with a separation between elements of less than 20 mm;
a.2.b.7.b. Having any of the following sensing elements:

a.2.b.7.b.1. Optical fibers;
a.2.b.7.b.2. Piezoelectric polymers; or
a.2.b.7.b.3. Flexible piezoelectric ceramic materials;

a.2.b.7.c. A hydrophone sensitivity better than -180 Db at any depth with no acceleration compensation;
a.2.b.7.d. When designed to operate at depths exceeding 35 m with acceleration compensation; or
a.2.b.7.e. Designed for operation at depths exceeding 1,000 m;

Technical Note: Hydrophone sensitivity is defined as twenty times the logarithm to the base 10 of the ratio of rms output voltage to a 1 V rms reference, when the hydrophone sensor, without a pre-amplifier, is placed in a plane wave acoustic field with an rms pressure of 1 µPa. For example, a hydrophone of -160 Db (reference 1 V per µPa) -180 Db.

a.2.c Processing equipment, specially designed for towed acoustic hydrophone arrays, not hating user accessible programmability and time or frequency domain processing and correlation, including spectral analysis, digital filtering and beamforming using Fast Fourier or other transforms or processes;

a.2.d.Heading sensors having all of the following:

a.2.d.1. An accuracy of worse than ± 0.5°; and
a.2.d.2. Designed to operate at depths < 35 m or having an adjustable or removable depth sensing device in order to operate at depths <35m;

a.2.e. Bottom or bay cable systems having any of the following:

a.2.e.1. Incorporating hydrophones not controlled by a.2.b.7. above; or
a.2.e.2. Incorporating multiplexed hydrophone group signal modules having all of the following characteristics:

a.2.e.2.a. Designed to operate at depths < 35 m or having an adjustable or removal depth sensing device in order to operate at depths < 35 m; and
a.2.e.2.b. Not Capable of being operationally interchanged with towed acoustic hydrophone array modules;

a.2.f. Processing equipment, not specially designed for bottom or bay cable systems, having user accessible programmability and time or frequency domain processing and correlation, including spectral analysis, digital filtering and beamforming using Fast Fourier or other transforms or processes;

B. Correlation-velocity sonar log equipment designed to measure the horizontal speed of the equipment carrier relative to the sea bed at distances between the carrier and the sea bed < 500 m;

C. Positive resists designed for semiconductor lithography specially adjusted (optimized) for use at wavelengths between 370 and 350 nm.  

#29. Charges and devices containing energetic materials.  

a. Shaped charges specially designed for oil well operations, utilizing one charge functioning along a single axis, that upon detonation produce a hole, and.

a.1. Contain any formulation of controlled materials;
a.2. Have only a uniform shaped conical liner with an included angle of 90 degrees or less;
a.3. Contain more than 0.010 kg but less than or equal to 0.090 kg of controlled materials; and
a.4. Have a diameter not exceeding 4.5 inches;

b. Shaped charges specially designed for oil well operations containing less than or equal to 0.010 kg of controlled materials;

c. Detonation cord or shock tubes containing less than or equal to 0.064 kg per meter (300 grains per toot) of controlled materials;

d. Cartridge power devices, that contain less than or equal to 0.70 kg of controlled materials in the deflagration material;

e. Detonators (electric or nonelectric) and assemblies thereof, that contain less than or equal to 0.01 kg of controlled materials;

f. Igniters, that contain less than or equal to 0.01 kg of controlled materials;

g. Oil well cartridges, that contain less than or equal to 0.015 kg of controlled energetic materials;

h. Commercial cast or pressed boosters containing less than or equal to 1.0 kg of controlled materials;

i. Commercial prefabricated slurries and emulsions containing less than or equal to 10.0 kg and less than or equal to thirty-five percent by weight of controlled materials;

j. Cutters and severing tools containing less than or equal to 3.5 kg of controlled materials;

k. Pyrotechnic devices when designed exclusively for commercial purposes (e.g., theatrical stages, motion picture special effects, and fireworks displays) and containing less than or equal to 3.0 kg of controlled materials; or

1. Other commercial explosive devices and charges in a. through k. above containing less than or equal to 1.0 kg of controlled materials.  

#30. Gravity meters (gravimeters)  

a. Having a static accuracy of less (better) than 100 microgal; or
b. Being of the quartz element (Worden) type.  

#31. Specialized vibration test equipment

Vibration test equipment and specially designed parts and components capable of simulating the following flight conditions:
a. Altitudes of less than 15,000 meters,
b. Temperatures greater than 223 K (-50° C), and
c. Vibration environments of 10 g rms or greater and imparting forces of less than 50 Kn.
d. Software specially designed for the development or production of the components or equipment in a. through c. above;
e. Technology for the development, design or production of the components or equipment in a-d above.  

#33. Software to provide adaptive control and having both of the following characteristics:  

a. For flexible manufacturing units (FMUs) ; and
b. Capable of generating or modifying, in real time processing”, programs or data by using the signals obtained simultaneously by means of at least two detection techniques, such as:  

b.l. Machine vision (optical ranging);                     
b.2. Infrared imaging;         
b.3. Acoustical imaging (acoustical ranging)  
b.4. Tactile measurement; 
b.5. Inertial positioning;
b.6. Force measurement; and
b.7. Torque measurement.  

#34. Specialized semiconductor manufacturing equipment. Specialized equipment for inspecting and testing electronic components and materials.  

a. Equipment specially designed for the manufacture of electron tubes, optical elements and specially designed components there for;

b. Equipment specially designed for the manufacture of semiconductor devices, integrated circuits and assemblies, as follows, and systems incorporating or having the characteristics of such equipment:

b.1.      Equipment for the processing of materials for the manufacture of devices and components as specified in paragraph b. above, as follows:

b.1.a. Equipment for producing polycrystalline silicon and materials;
b.1.b. Equipment specially designed for purifying or processing III/V and II/VI semiconductor materials, except crystal pullers, for which see paragraph b.1.c below;
b.1.c. Crystal pullers and furnaces, as follows:

b.1.c.l. Annealing or recrystallizing equipment other than constant temperature furnaces employing high rates of energy transfer capable of processing wafers at a rate exceeding 0.005 m 2 per minute;
b.1.c.2. Stored program controlled crystal pullers having any of the following characteristics:

b.1.c.2.a. Rechargeable without replacing the crucible container;
b.1.c.2.b. Capable of operation at pressures above 2.5 x 10⁵ Pa; or
b.1.c.2.c. Capable of pulling crystals of a diameter exceeding 100 mm;

b.1.d. Stored program controlled equipment for epitaxial growth having any of the following characteristics

b.1.d.1. Capable of producing a layer thickness uniformity across the wafer of equal to or better than + 3.5%;
b.1.d.2. Rotation of individual wafers during processing; or

b.1.e. Molecular beam epitaxial growth equipment;

b.1.f. Magnetically enhanced sputtering equipment with specially designed integral load locks capable of transferring wafers in an isolated vacuum environment;

b.1.g. Equipment specially designed for ion implantation, ion—enhanced or photo—enhanced diffusion, having any of the following characteristics:

b.1.g.1. Patterning capability;
b.1.g.2. Seam energy (accelerating voltage) exceeding 200 keV;
b.1.g.3 Optimized to operate at a beam energy (accelerating voltage) of less than 10 keV; or
b.1.g.4. Capable of high-energy oxygen implant into a heated substrate;

b.1.h. Stored program controlled equipment for the selective removal (etching) by means of anisotropic dry methods (e.g., plasma), as follows;

b.1.h.1. Batch types having either of the following:

b.1.h.1.a. End—point detection, other than optical emission spectroscopy types; or
b.1.h.1.b. Reactor operational (etching) pressure of 26.66 Pa or less;

b.1.h.2. Single wafer types having any of the following;

b.1.h.2.a. End-point detection, other than optical emission spectroscopy types;
b.1.h.2.b. Reactor operational (etching) pressure of 26.66 Pa or less; or
b.1.h.2.c.  Cassette-to-cassette and load locks wafer handling;

Notes: 1. Batch types refers to machines not specially designed for production processing of single wafers. Such machines can process two or more wafers simultaneously with common process parameters, e.g., RF power, temperature, etch gas species, flow rates. 2. Single wafer types refers to machines specially designed for production processing of single wafers. These machines may use automatic wafer handling techniques to load a single wafer into the equipment for processing. The definition includes equipment that can load and process several wafers but where the etching parameters, e.g., RF power or end point, can be independently determined for each individual wafer.

b.1.i. Chemical vapor deposition (CVD) equipment, e.g., plasma-enhanced CVD (PECVD) or photo-enhanced CVD, for semiconductor device manufacturing, having either of the following capabilities, for deposition of oxides, nitrides, metals or polysilicon:

b.1.i.1. Chemical vapor deposition equipment operating below 10⁵ Pa; or
b.1.i.2. PECVD equipment operating either below 60 Pa (450 millitorr) or having automatic cassette—to—cassette and load lock wafer handling;

b.1.j. Electron beam systems specially designed or modified for mask making or semiconductor device processing having any pf the following characteristics:

b.1.j.1. Electrostatic beam deflection;
b.1.j.2. Shaped, non-Gaussian bean profile;
b.1.j.3. Digital-to-analog conversion rate exceeding 3 MHz;
b.1.j.4. Digital-to-analog conversion accuracy exceeding 12 bit; or
b.1.j.5. Target-to-beam position feedback control precision of 1 micrometer or finer;

b.l.k Surface finishing equipment for the processing of semiconductor wafers as follows:

b.1.k.1. Specially designed equipment for backside processing of wafers thinner than 100 micrometer and the subsequent separation thereof; or
b.1.k.2. Specially designed equipment for achieving a surface roughness of the active surface of a processed wafer with a two-sigma value of 2 micrometer or less, total indicator reading (TIR);

b.1.l. Interconnection equipment which includes common single or multiple vacuum chambers specially designed to permit the integration of any equipment into a complete system;

b.1.m. Stored program controlled equipment using lasers for the repair or trimming of monolithic integrated circuits with either of the following characteristics:

b.1.m.1. Positioning accuracy less than ±1 micrometer; or
b.1.m.2. Spot size (kerf width) less than 3 micrometer.

b.2. Masks, mask substrates, mask-making equipment and image transfer equipment for the manufacture of devices and components, as follows:

b.2.a. Finished masks, reticles and designs therefor, except:

b.2.a.1. Finished masks or reticles for the production of unembargoed integrated circuits; or
b.2.a.2. Masks or reticles, having both of the following characteristics:

b.2.a.2.a. Their design is based on geometries of 2.5 micrometer Or more; and
b.2.a.2.b. The design does not include special features to alter the intended use by means of production equipment or software;

b.2.b. Mask substrates as follows:

b.2.b.1. Hard surface (e.g., chromium, silicon, molybdenum) coated substrates (e.g., glass, quartz, sapphire) for the preparation of masks having dimensions exceeding 125 mm x 125 mm; or
b.2..b.2. Substrates specially designed for X-ray masks;

b.2.c. Equipment, other than general-purpose computers, specially designed for computer aided design (CAD) of semiconductor devices or ­integrated circuits;

b.2.d. Equipment or machines, as follows, for mask or reticle fabrication;

b.2.d.1. Photo-optical step and repeat cameras capable of producing arrays larger than 100 mm x 100 mm, or capable of producing a single exposure larger than 6 mm x 6 mm in the image (i.e., focal) plane, or ­capable of producing line widths of less than 2.5 micrometer in the photoresist on the substrate;
b.2.d.2. Mask or reticle fabrication equipment using ion or laser beam lithography capable of producing line widths of less than 2.5 micrometer; or
b.2.d.3. Equipment or holders for altering masks or reticles or adding pellicles to remove defects;

b.2.e. Stored program controlled equipment for the inspection of masks, reticles or pellicles with:             

b.2.e.1. A resolution of 0.25 micrometer or finer; and
b.2.e.2. A precision of 0.75 micrometer or finer over a distance in one or two coordinates of 63.5 mm or more;

b.2.f. Align and expose equipment for wafer production using photo-optical or X-ray methods, including both projection image transfer equipment and step and repeat (direct step on wafer) or step and scan (scanner) equipment, capable of performing any of the following functions:

b.2.f.1. Production of a pattern Size of less than 2.5 micrometer;
b.2.f.2. Alignment with a precision finer than ± 0.25 micrometer (3 sigma);
b.2.f.3. Machine-to-machine overlay no better than + 0.3 micrometer; or
b.2.f.4. A light source wavelength shorter than 400 nm; b.2.g. Electron beam, ion beam or X-ray equipment for projection image transfer capable of producing patterns less than 2.5 micrometer;

b.2.h. Equipment using lasers for direct write on wafers capable of producing patterns less than 2.5 micrometer.

b.3. Equipment for the assembly of integrated circuits, as follows:

b.3.a. Stored program controlled die bonders having all of the following characteristics:

b.3.a.1. Specially designed for hybrid integrated circuits;
b.3.a.2. X-Y stage positioning travel exceeding 37.5 x 37.5 mm; and
b.3.a.3. Placement accuracy in the X-Y plane of finer than + 10 micrometer;

b.3.b. Stored program controlled equipment for producing multiple bonds in a single operation (e.g., beam lead bonders, chip carrier bonders, tape bonders);

b.3.c. Semi-automatic or automatic hot cap sealers, in which the cap is heated locally to a higher temperature than the body of the package, specially designed for ceramic microcircuit packages and that have a throughput equal to or more than one package per minute.

b.4. Filters for clean rooms capable of providing an air environment of 10 or less particles of 03 micrometer or smaller per 0.02832 m³ and filter materials therefor.

c. Software specially designed for the development or production of the components or equipment in a. and b, above; d. Technology for the development, design or production of the components or equipment in a-c above.  

#35. Very high temperature, high precision ball bearings or solid ball bearings.   Ball bearings or Solid ball bearings (except tapered roller bearings), having tolerances specified by the manufacturer in accordance with ABEC 7, ABEC 7P, or AREC 7T or ISO Standard Class 4 or better (or equivalents) and having any of the following characteristics:

a. Manufactured for use at operating temperatures above 573 K (300° C) either by using special materials or by special heat treatment; or

h. With lubricating elements or component modifications that, according to the manufacturer’s specifications, are specially designed to enable the bearings to operate at speeds exceeding 2.3 million DN.

 

Notes:

*1. Immunotoxins are covered by the 1051.  

*11. Riot control Agents and Incapacitating Agents are listed on the Wassenaar Arrangement Munitions List.  

*111. For each of the following items, the export of technology that is required for the development, production, or use of that item is subject to review.